Apparatus and method for semiconductor wafer bumping via injection molded solder

ABSTRACT

An improved apparatus for semiconductor wafer bumping utilizes the injection molded solder process and is designed for high volume manufacturing. The apparatus includes equipment for filling patterned mold cavities on a mold structure with solder, equipment for positioning and aligning a patterned surface of a semiconductor structure directly opposite to the solder filled patterned mold cavities of the mold structure, a fixture tool for holding and transferring the aligned mold and semiconductor structures together, and equipment for receiving the fixture tool and transferring the solder from the aligned patterned mold cavities to the aligned patterned semiconductor first surface. The solder transfer equipment include a wafer heater stack configured to heat the semiconductor structure and a mold heater stack configured to heat the mold structure to a process temperature slightly above the solder&#39;s melting point. The fixture tool with the aligned mold and semiconductor structures is inserted between the wafer heater stack and the mold heater stack. A deposition chamber is formed between the wafer heater stack and the mold heater stack by sealing the wafer heater stack and the mold heater stack against the frame.

CROSS REFERENCE TO RELATED CO-PENDING APPLICATIONS

This application claims the benefit of U.S. provisional application Ser.No. 60/888,137 filed Feb. 5, 2007 and entitled “APPARATUS AND METHOD FORSEMICONDUCTOR WAFER BUMPING VIA INJECTION MOLDED SOLDER”, the contentsof which are expressly incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to an apparatus and a method forsemiconductor wafer bumping, and more particularly to a solder transferapparatus for semiconductor wafer bumping.

BACKGROUND OF THE INVENTION

Injection Molded Solder (IMS) is a process used to produce solder bumpson a semiconductor wafer surface. Referring to FIG. 1, the IMS process30 includes depositing solder into mold cavities (34), forming a patternon the semiconductor wafer surface (32), aligning the filled moldcavities with the patterned semiconductor wafer surface and thentransferring the solder from the mold cavities to the semiconductorwafer surface (38). Solder bumps are formed in a glass mold plate 82 byinjecting molten solder into the etched mold cavities. The etchedcavities match the pattern of solder bumps required on the semiconductorwafer surface. The process provides fine pitch placement of the solderbumps in the range of 10 to 500 micrometers separation distance betweenadjacent solder bumps.

The IMS process has been tested and applied for laboratory scaleapplications. It is desirable to provide a scale-up process and a highvolume manufacturing (HVM) apparatus designed to optimize the highvolume manufacturing process. A critical aspect of the scale-up processinvolves the solder transfer apparatus and process. It is desirable toprovide a sealable deposition chamber with quick heating and coolingcycles while maintaining reliable, high precision and repeatablepositioning of the mold plate relative to the semiconductor wafer.

SUMMARY OF THE INVENTION

In general, in one aspect, the invention features an apparatus forforming solder bumps onto semiconductor structures including equipmentfor filling patterned mold cavities formed on a first surface of a moldstructure with solder, equipment for positioning and aligning apatterned first surface of a semiconductor structure directly oppositeto the solder filled patterned mold cavities of the mold structure, afixture tool for holding and transferring the aligned mold andsemiconductor structures together and solder transfer equipment forreceiving the fixture tool with the aligned mold and semiconductorstructures and transferring the solder from the aligned patterned moldcavities to the aligned patterned semiconductor first surface. Thefixture tool includes a frame having a central aperture dimensioned tosupport a substrate and wherein a second surface opposite to thepatterned first surface of the semiconductor structure is brought incontact with a first surface of the substrate. The solder transferequipment include a wafer heater stack configured to heat thesemiconductor structure and a mold heater stack configured to heat themold structure to a process temperature slightly above the solder'smelting point. The fixture tool with the aligned mold and semiconductorstructures is inserted between the wafer heater stack and the moldheater stack so that a second surface opposite to the first surface ofthe substrate is in contact with the wafer heater stack and a secondsurface opposite to the first surface of the mold structure is incontact with the mold heater stack. A deposition chamber is formedbetween the wafer heater stack and the mold heater stack by sealing thewafer heater stack and the mold heater stack against the frame.

Implementations of this aspect of the invention may include one or moreof the following features. The wafer heater stack is sealed against theframe via a graphite seal ring positioned between an edge of a secondsurface opposite to the first surface of the substrate and an edge ofthe central aperture. The mold heater stack is sealed against the framevia a gas bellow seal ring. The apparatus further includes equipment forinjecting a process gas into the deposition chamber. The process gascomprises one of formic acid, hydrogen or nitrogen. The gas bellow sealring comprises a seal frame and a gas bellow placed within a seal framegroove and wherein the seal frame comprises gas feed-through lines forinjecting the process gas into the deposition chamber. The seal framefurther comprises vacuum lines for evacuating the deposition chamber.The gas bellow comprises a material configured to withstand the processgas and the process temperature. The gas bellow material comprisesPerlast. The fixture tool further comprises one or more clamp/spacerassemblies arranged symmetrically around the frame, each clamp/spacerassembly comprising a clamp configured to clamp the mold andsemiconductor structures together and a spacer configured to be insertedbetween the first surface of the semiconductor structure and the firstsurface of the mold structure and thereby to separate the mold andsemiconductor structures by a distance equal to the spacer's height. Thespacer and the clamp within each clamp/spacer assembly are configured tomove independent from each other. The clamp/spacer assemblies areconfigured to move independent from each other. The spacer is configuredto be rotated remotely with high precision and repeatability at theprocess temperature. The apparatus further includes high precisionrotary stroke bearings providing the high precision and repeatability ofthe spacer rotation. The substrate comprises a coefficient of thermalexpansion (CTE) matching the semiconductor structure's CTE. Thesubstrate comprises silicon. The substrate comprises vacuum groovesarranged radially and at the perimeter of concentric circles formed onthe substrate and wherein vacuum is drawn through the vacuum grooves forholding the semiconductor structure onto the substrate. The mold heaterstack comprises a mold chuck, a mold hot plate being in contact with afirst surface of the mold chuck, a mold hot plate cooling flange beingin contact with the mold hot plate, a mold ceramic expansion barrierbeing in contact with the mold hot plate cooling flange and a mold watercooled heat exchanger being in contact with the mold ceramic expansionbarrier and wherein a second surface of the mold chuck opposite to thefirst surface is brought in contact with the second surface of the moldstructure. The mold heater stack further comprising mold cooling flangeair bellows passing through through-bores formed in the mold watercooled heat exchanger and the mold ceramic expansion barrier andreaching the mold hot plate cooling flange. The mold chuck comprisessilicon carbide. The wafer heater stack comprises a wafer hot platebeing in contact with a second surface opposite to the first surface ofthe substrate, a wafer hot plate cooling flange being in contact withthe wafer hot plate, a wafer ceramic expansion barrier being in contactwith the wafer hot plate cooling flange and a wafer water cooled heatexchanger being in contact with the wafer ceramic expansion barrier. Thewafer heater stack further comprising wafer cooling flange air bellowspassing through through-bores formed in the wafer water cooled heatexchanger and the wafer ceramic expansion barrier and reaching the waferhot plate cooling flange. The ceramic expansion barriers comprise a lowCTE material. The ceramic expansion barriers comprise Zerodur. Anadjustable gap is formed within the deposition chamber between the firstsurface of the mold structure and the patterned first surface of thesemiconductor structure. The gap is adjustable in the range between 0and 3000 micrometers. The apparatus further includes a drive elementconfigured to move the mold heater stack and the mold plate toward thesemiconductor structure and thereby adjusting the gap. The mold chuckcomprises vacuum grooves arranged radially and at the perimeter ofconcentric circles formed on the mold chuck and wherein vacuum is drawnthrough the vacuum grooves for holding the mold structure onto the moldchuck.

In general, in another aspect, the invention features a method forforming solder bumps onto semiconductor structures including thefollowing steps. First, filling patterned mold cavities formed on afirst surface of a mold structure with solder. Next, positioning andaligning a patterned first surface of a semiconductor structure directlyopposite to the solder filled patterned mold cavities of the moldstructure. Next, providing a fixture tool for holding and transferringthe aligned mold and semiconductor structures together. The fixture toolcomprises a frame having a central aperture dimensioned to support asubstrate and wherein a second surface opposite to the patterned firstsurface of the semiconductor structure is brought in contact with afirst surface of the substrate. Next, inserting the fixture tool withthe aligned mold and semiconductor structures into solder transferequipment and transferring the solder from the aligned patterned moldcavities to the aligned patterned semiconductor first surface. Thesolder transfer equipment includes a wafer heater stack configured toheat the semiconductor structure and a mold heater stack configured toheat the mold structure to a process temperature slightly above thesolder's melting point. The fixture tool with the aligned mold andsemiconductor structures is inserted between the wafer heater stack andthe mold heater stack so that a second surface opposite to the firstsurface of the substrate is in contact with the wafer heater stack and asecond surface opposite to the first surface of the mold structure is incontact with the mold heater stack. A deposition chamber is formedbetween the wafer heater stack and the mold heater stack by sealing thewafer heater stack and the mold heater stack against the frame.

The solder transferring process includes the following steps. First,preheating the mold and semiconductor structures to a first temperaturebelow the process temperature while maintaining the aligned mold andsemiconductor structures within the frame clamped to each other and tothe frame via the clamps and separated from each other by the spacers.Next, injecting the process gas into the deposition chamber. Next,holding the semiconductor structure onto the substrate and the moldstructure onto the mold chuck by drawing vacuum through thecorresponding vacuum grooves and unclamping the clamps and heating themold and semiconductor structures to the process temperature via themold hot plate and the wafer hot plate, respectively, thereby meltingthe solder in the mold cavities. Next, removing the spacers and bringingthe mold structure in contact with the semiconductor structure wherebythe molten solder transfers from the mold cavities onto the patternedfirst surface of the semiconductor structure. Next, moving the moldstructure away from the semiconductor structure, thereby separating themold and semiconductor structures and then inserting the spacers betweenthe separated mold and semiconductor structures and maintaining theseparated mold and semiconductor structures at the process temperaturefor a period of time. Next, clamping the mold and semiconductorstructures together and onto the frame with the clamps and turning offthe vacuum. Finally, cooling down the mold and semiconductor structuresto room temperature.

BRIEF DESCRIPTION OF THE DRAWINGS

Referring to the figures, wherein like numerals represent like partsthroughout the several views:

FIG. 1 is a schematic diagram of a laboratory scale Injection MoldedSolder (IMS) process;

FIG. 2 is a schematic diagram of a scale-up IMS process according tothis invention;

FIG. 3 is a block diagram of the scale-up IMS line process flow;

FIG. 4 is a schematic diagram of the HVM IMS line equipment systemaccording to this invention;

FIG. 5 is a schematic side view diagram of the mold fill process;

FIG. 6 is a top view diagram of the mold fill process;

FIG. 7A is a magnified view of a mold area with unfilled cavities;

FIG. 7B is a magnified view of a mold area with solder filled cavities;

FIG. 8 is a schematic diagram of the solder transfer process;

FIG. 9 depicts the HVM STT equipment system of this invention;

FIG. 10 depicts the HVM STT material flow;

FIG. 11 is a schematic block diagram of the STT process steps;

FIG. 12 is a schematic block diagram of the STT steady-state cycle time;

FIG. 13 depicts the HVM aligner module without the fixturing mechanisms;

FIG. 14 depicts the HVM aligner module components with the transportfixture (left) and without the transport fixture (right);

FIG. 15 depicts the STT mold/wafer transport fixture;

FIG. 16 is a front exploded view of the STT mold/wafer transportfixture;

FIG. 17 illustrates the clamp and spacer actuators;

FIG. 18A illustrates the STT mold/wafer transport fixture with a 300 mmwafer;

FIG. 18B illustrates the STT mold/wafer transport fixture with a 200 mmwafer;

FIG. 19 depicts the HVM STT chamber;

FIG. 20 is a cross-sectional view of the HVM STT chamber;

FIG. 21 is an exploded view of the HVM STT chamber;

FIG. 22 is an exploded perspective view of the STT chamber mold stack;

FIG. 23 is a perspective view of the mold heater stack;

FIG. 24 is an exploded perspective view of the mold heater stack of FIG.23;

FIG. 25 is an exploded side view of the mold heater stack of FIG. 23;

FIG. 26 is a top perspective view of the mold heater stack seal frame;

FIG. 27 is a side view of the hot plate cooling flange and the moldchuck fine Z-drive;

FIG. 28 is a top perspective view of the wafer heater stack;

FIG. 29 is a side exploded view of the wafer heater stack of FIG. 28;

FIG. 30 is top view of the transport fixture wafer chuck;

FIG. 31 is a side perspective view of the wafer heater stack of FIG. 28;

FIG. 32A is a schematic cross-sectional side view of the STT chamberwith the installed transport fixture;

FIG. 32B depicts a cross-sectional side view of the mold stack with theseal down;

FIG. 32C depicts a cross-sectional side view of the mold stack with theseal up.

FIG. 33 is a high magnification image of a patterned surface of asemiconductor wafer;

FIG. 34 depicts selecting a first target area in the image of FIG. 33with a specific wafer pad pattern;

FIG. 35 depicts defining a wafer pad area around a pad in the firsttarget area of FIG. 34;

FIG. 36 depicts locating and counting all pad positions relative to thewafer target area in the first target area of FIG. 34;

FIG. 37 depicts searching all possible target areas that match thepattern of the first target area;

FIG. 38 depicts counting the wafer pads in all possible target areasthat match the pattern of the first target area;

FIG. 39 depicts finding the center coordinates for all wafer pads thatwere counted in FIG. 38;

FIG. 40 depicts a preliminary target area used for training;

FIG. 41 depicts a first wafer pad area within the preliminary targetarea used for training;

FIG. 42 depicts measuring the X and Y boundaries of the first wafer padarea of FIG. 41;

FIG. 43 depicts building a wafer pad mask covering 90% of the firstwafer pad area of FIG. 41;

FIG. 44 depicts placing the wafer pad mask of FIG. 43 on the wafer padsin the preliminary target area of FIG. 40;

FIG. 45 depicts a unique wafer target area used for the alignmentprocess;

FIG. 46 depicts a block diagram of the process for identifying a uniquewafer target for training the alignment system;

FIG. 47 depicts a block diagram of the process for identifying a uniquemold target for training the alignment system;

FIG. 48 depicts a block diagram of the wafer/mold alignment processutilizing the uniquely identified wafer and mold target areas;

FIG. 49 is a continuation of the diagram of FIG. 48;

FIG. 50 is a continuation of the diagram of FIG. 49;

FIG. 51 depicts a block diagram of another embodiment for the processfor identifying a unique wafer target for training the alignment systemutilizing a mask; and

FIG. 52 is a continuation of FIG. 51.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 2, the scale-up IMS process 50 includes filling moldcavities with solder (34), inspecting the filled mold plate (86),forming a pattern on the semiconductor wafer surface (32), inspectingthe wafer surface (75) and then transferring the solder from the moldcavities to the semiconductor wafer surface (38). Referring to FIG. 3,the scale-up IMS process 50 includes cleaning of the molds at a moldclean station 60, filling of the mold cavities with solder andinspecting the filled mold plate at a mold prepare station 80, andtransferring of the solder from the mold cavities onto the patternedsemiconductor wafer surface at a wafer bump station 90. The mold preparestation 80 includes a mold fill tool (MFT) 100, a mold inspect tool(MIT) 200, and a mold repair tool 88. The wafer bump station 90 includesa solder transfer tool (STT) 300 and a wafer loader tool 400. New molds61 and previously used molds 62 pass through the mold clean station 60where they get cleaned with an acid solution 63 and a base solution 64.The clean molds 82 enter a mold stocker 500 and from there they areintroduced into the MFT 100. After filling the mold cavities withsolder, the molds are inspected at the MIT 200 and then transferred to aready mold stocker 550. Molds that do not pass inspection are eitherrecycled at the mold clean station 60 or are repaired at the repair tool88. Molds that are repaired pass through the MIT 200 again and uponpassing the inspection are transferred to ready mold stocker 550. Insome embodiments the mold repair tool 88 is integrated with the MIT 200.From the ready mold stocker 550 the molds are introduced into the STT300. Patterned wafers 74 are introduced into the wafer loader 400 andfrom there into the STT 300. After the solder transfer process thebumped wafers 76 exit the wafer bump station 90 and the dirty molds 62 bare introduced into the mold clean station 60 again. The process repeatsuntil all wafers 74 are bumped. A schematic diagram of the HVM IMSequipment system 52 is shown in FIG. 4. It includes the mold cleanstation 60, the mold stocker 500, the MFT 100, the MIT 200, the STT 300,the wafer loader, i.e., front open unified pod (FOUP) 400 and a moldcart 600. In one example, the HVM system 52 has a capacity of 300 waferper day (1 wafer every 4 minutes) and 350 molds per day (1 mold every3.5 minutes). It provides automation of the wafer and mold transfer. TheSTT can process 200 mm and 300 mm wafers without any hardware changesand each mold carrier can carry up to 25 molds. The molds are identifiedwith a bar code mechanism and the mold stocker/sorter is integrated inthe process line. There is also an integrated mold and wafer trackingand management system. The system can accommodate any solder typeincluding no lead/eutectic PbSn (low temperature) at start up and highlead later.

Referring to FIG. 5 and FIG. 6, the mold fill process 34 includesmelting bulk solder (wire, shots, slugs) in a reservoir 81. Reservoir 81is heated above the melting point of the solder and is slightlypressurized. An injector head 83 communicates with the reservoir 81 andis in contact with the mold plate 82. Mold plate 82 is scanned under theinjector head 83 in the scan direction 87 and molten solder is injectedthrough a solder slot 89 formed at the bottom of the injector head 83and fills the empty cavities 85 a in the mold 82. The filled mold plateis then cooled and inspected at the MIT 200. FIG. 7A depicts a glassmold plate 82 with unfilled cavities 85 a and FIG. 7B depicts a glassmold with filled cavities 85 b. Cavities 85 are etched on the glass mold82 according to the required bump pattern. The glass mold 82 has athermal expansion coefficient (CTE) similar to the CTE of thesemiconductor wafer 72.

Referring to FIG. 8, the solder transfer process 38 includes bringingtogether a wafer 74 patterned with under bump metallurgy (UBM)structures 73 with a mold plate 82 having solder filled cavities 85 b(92). Next, heating the mold 82 and the wafer 74 to a temperature of 20degrees higher than the solder melting point (94) and then bringing themold 82 and wafer 74 in close proximity (about 20 micrometers) or softcontact so that the solder wets the UBM structures 73 (96). The solderbumps from the cavities 85 b are transferred to the UBM structures 73and stay on the wafer 74 after the mold 82 separates from the wafer 74(98). A critical aspect of this process is the alignment of the moldplate 82 relative to the semiconductor wafer 74 so that the solder bumps85 b are transferred to precise UBM structures 73. The alignment needsto be maintained during the transport of the aligned mold-wafer systemfrom station to station and during the actual solder transfer process atthe required temperature, atmosphere and pressure.

Referring to FIG. 9, the HVM STT equipment system 300 includes amold/wafer aligner 800, a mold/wafer transport fixture 900 and thesolder transfer tool (STT) chamber unit 301. Referring to FIG. 10, FIG.11 and FIG. 12, the HVM STT process 100 includes the following steps.First the patterned wafer 74 enters the wafer FOUP unit 410 (101) andthe filled mold 82 enters the mold pod unit 420 (106). Next, a robot endeffector module (EFEM) 850 transfers the wafer 74 and the mold 82 in thetransfer station 856 where the wafer 74 is optically characterized(102), pre-aligned (103) and flipped (104). The filled mold 82 ispre-aligned (107) and the mold identifying barcode is read and enteredin the computer (108). Next, a robot end effector module (EFEM) 850transfers the wafer 74 and the mold 82 in the aligner module 800. In thealigner the wafer and mold are placed in the mold/wafer transportfixture 900 so that the mold 82 is positioned under the wafer (105, 109)and images of the wafer and the mold are taken (110, 112). The WedgeError Compensation process is performed at this point (111). Wedge ErrorCompensation describes the action of “floating” the mold on the alignerchuck so that it evenly contacts all the fixture spacer flags (which inturn sit on the wafer edge). Once in even contact, the mold chuck locksand the parallelism (no wedge error) of mold to wafer is set. Next, themold and the wafer are aligned (113) and the aligned mold and wafer arelocked in the transport fixture 900 (114). Transport fixture 900 withthe aligned mold 82 and wafer 74 is then transferred in the STT chamberunit 301, where the transfer of the solder bumps takes place. Thealigned mold and wafer are purged with nitrogen (115) and then arepreheated (116). In one example, the temperature is increased from roomtemperature to 180 degrees C. in 2 minutes. At the temperature of atleast 180 degrees C. the mold 82 and wafer 74 are scrubbed with an acid(117) and then the temperature is increased from 180 degrees to 280degrees (118) in 3 minutes. Next, the mold is brought into contact(under controlled pressure) with the wafer (119) and the solder bumps 85b transfer from the mold cavities 85 onto the UBM pads 73 of thepatterned wafer 74. After the solder transfer the mold is separated fromthe wafer in a controlled way (120). The separated wafer and mold arekept at the temperature of 280 degrees C. for about 10 minutes (121) sothat a good inter-metallic bond is formed between the solder bumps andthe conducting patterned lines on the wafer surface (inter-metallicdwell). Next, the temperature is ramped down to 200 degrees C. in 3minutes and the solder bumps solidify on the wafer surface (122) andthen the temperature is ramped down to 60 degrees in 8 minutes. Thefixture 900 with the separated mold and wafer are purged with air (124)and the alignment lock is released (125). Next the wafer is flipped 126and then the empty mold 82 is transferred to the mold port 430 (127) andthe bumped wafer 74 to the wafer FOUP unit 440 (128). The processrepeats itself for the next mold/wafer pair. In one example, the soldertransfer process time is 29 minutes and the alignment time is 65 sec.The STT system is designed to have more than one STT chamber units 301to increase the production throughput. In the example of FIG. 10, thereare four STT chamber units 301, 302, 303 and 304. The STT system of FIG.10 has a throughput of 150 wafer/day and an approximate production rateof one wafer every 8 minutes. This parallel process cycle is shownschematically in FIG. 12. As shown, a first mold/wafer pair positionedin a fixture (n) is loaded in the aligner (151), aligned (152) and thenthe aligned fixture is transferred from the aligner to the processstation ST1 (153), where is processed (154). The processed fixture (n)is then unloaded from process station ST1 to the fixtureunloader/transfer station (156) and from there the EFEM unloads fixture(n) to the corresponding mold port 430 or wafer unit 440 (159). Thetotal processing time fixture (n) is 2051 seconds and is distributed asfollows: 131 seconds for loading fixture (n) in the aligner (step 151),65 seconds for aligning fixture (n) (step 152), 41 seconds fortransferring the aligned fixture (n) to process station ST1 (step 153),1742 seconds for the solder transfer process of fixture (n) (step 154),25 seconds for unloading fixture (n) from ST1 to transfer station (step156), 47 seconds for moving mold and wafer to their ports (step 159). Inthe next staggered parallel process a second mold/wafer pair in fixture(n+1) is loaded in the transfer station (149), then loaded in thealigner (155), aligned (157) and then the aligned fixture is transferredfrom the aligner to the process station ST2 (161), where is processed(162). The processed fixture (n+1) is then unloaded from process stationST2 to the fixture unloader/transfer station (163) and from there theEFEM unloads fixture (n+1) to the corresponding mold port 430 or waferunit 440 (164). The total processing time for fixture (n+1) is 2288seconds, is distributed as above and includes 42 second for waiting inthe transfer station (step 149). Similarly, a third mold/wafer pair infixture (n+2) (158) is processed in the next staggered process startingat step 158 and a fourth mold/wafer pair in fixture (n+3) is processedin the next staggered process starting at step (177).

Referring to FIG. 15 and FIG. 16, the mold/wafer transport fixture 900includes a square frame 910 having a central aperture 911 and fourclamp/spacer assemblies 930 a-930 d. A circular ceramic chuck 920 ismounted in the central aperture 911 of the frame and a seal ring 922 isplaced at the interface between the front edge of the ceramic chuck andthe backside edge of the central aperture 911. Clamp/spacer assemblies930 a-930 d are mounted at the centers of each side of the square frame910 a-910 d, respectively. Each clamp/space assembly 930 a includes aspacer 932 a and a clamp 934 a. Spacer 932 a and clamp 934 a areindependently remote controlled with actuators 832, shown in FIG. 17.The motion of spacer 932 a and clamp 934 a is very precise andrepeatable both at room temperatures and at the high temperatures wherethe solder transfer process takes place. In the embodiment of FIG. 15,spacer 923 a and clamp 934 a are configured to rotate around an axisperpendicular to their elongated body and passing through an end or thecenter of their body. The high precision and repeatable rotation of theclamps and the spacer is accomplished by using high precision rotarystroke bearings 834 along the rotation shaft, shown in FIG. 17. In oneexample, rotary stroke bearings 834 are purchased from MahrInternational Co, Goettingen, Germany. In other examples linkages, camfollowers, or linear slides are used to provide repeatable highprecision motion of the spacers and clamps. Spacers 932 a-933 d andclamps 934 a, 934 d are dimensioned and arranged so that the transportfixture 900 can accommodate both a 300 mm and a 200 mm wafer, as shownin FIG. 18A and FIG. 18B, respectively. In operation, a wafer 74 isloaded onto the silicon chuck 920 and spacers 932 a-932 d are placed ontop of the wafer 74. Next, a mold 82 is placed on top of the spacers 932a-932 d and then clamps 934 a-934 d are moved over the wafer/mold stackto clamp the stack together. The clamping force is applied through thespacers and this arrangement prevents the introduction of stresses ortorque on the wafer or the mold, damage of the wafer and mold surfaces,contact between the mold and wafer and helps maintain the high accuracyalignment between the wafer and mold. The ceramic chuck 920 has circularand radial grooves 922 through which vacuum (vacuum grooves) is drawn tohold the wafer 74 in contact with the chuck 920. A vacuum pump lineconnects to the transport fixture 910 via the vacuum pass throughelements 935. The ceramic chuck 920 has the same CTE as the wafer 74. Inone example the chuck 920 is made of silicon and the seal ring 922 ismade of graphite. In one example, the transport fixture frame 920 ismade of aluminum or other thermally stable alloy and has a width of420-430 millimeters, length of 430-440 millimeters, and a height of 40millimeters. The central aperture 911 of the base 910 has a diameter ofat least 300 millimeters to be able to accommodate substrates and wafershaving diameter up to 300 millimeter. As shown in FIG. 30, the ceramicchuck 920 also has a raised edge 921 that contacts the graphite sealring 922 to seal against the inner edge of the back surface of thetransport fixture frame 910.

Referring to FIG. 19, FIG. 20 and FIG. 21, STT chamber unit 301 includesa top frame 306, a bottom frame 308, frame Z-guide rods 309 a-309 d, amold heater stack 310 supported on the intermediary frame 307, and awafer heater stack 330 supported on the top frame 306.

Referring to FIG. 22 mold heater stack 310 includes a cooling flange gasmanifold 311, a water cooled heat exchanger 312, a ceramic expansionbarrier 313, cooling flange air bellows 314, a hot plate cooling flange315, mold hot plate 316, mold chuck 317, bellows gas seal 320 and a sealframe 319 for the formic acid injection. The cooling flange gas manifold311 is positioned below the water cooled heat exchanger 312. The heatexchanger 312 is made of a good thermal conducting material and ispositioned below the ceramic expansion barrier 313. In one example, theheat exchanger 312 is made of aluminum. The ceramic expansion barrier313 is made of a material with a low CTE and is positioned below the hotplate cooling flange 315. In one example barrier 313 is made ofZerodur®, a glass ceramic composite with a very low CTE, manufacture bySchott AG, Duryea, Pa., USA. The low CTE ceramic expansion barrier iscapable of accommodating the high temperatures (about 300° C. or more)of the hot plate on one side while the other side is in contact with thewater cooled heat exchanger which is at room temperature. Cooling flangeair bellows 314 pass through through-bores formed in the water cooledheat exchanger 312 and the ceramic expansion barrier 313 to reach thecooling flange 315. The mold hot plate 316 is placed on top of thecooling flange 315 and the mold chuck 317 is placed on top of the hotplate 316. In one example mold chuck 317 is made of silicon carbide andhot plate 316 is a ceramic heater plate.

Referring to FIG. 28 and FIG. 29, the wafer heater stack 330 includes awater cooled heat exchanger 331, a ceramic expansion barrier 332,cooling flange air bellows 333, a hot plate cooling flange 334, andwafer hot plate 335. As was described above, the ceramic expansionbarrier is made of a low CTE material capable of accommodating the hightemperatures (about 300° C. or more) of the hot plate on one side whilethe other side is in contact with the water cooled heat exchanger whichis at room temperature. The wafer heater stack 330 is arranged mirrorimaged to the mold heater stack 310. The wafer chuck corresponding tothe mold chuck 317 is provided by the wafer chuck 920 of the transportfixture 900, shown in FIG. 30. As shown in FIG. 30, the wafer chuck 920has a raised edge 921 that contacts a graphite seal ring 922 to sealagainst the inner edge of the back surface of the transport fixtureframe 910, shown in FIG. 32A.

For the solder transfer operation, the transport fixture 900 with thealigned filled mold 82 and wafer 74 is placed in the solder transferunit 301 between the mold heater stack 310 and the wafer heater stack330. The transport fixture 900 is oriented between the mold stack 310and the wafer stack 330 so that the back side of the wafer chuck 915(shown in FIG. 15) is positioned to be in contact with the wafer hotplate 335 of the wafer stack 340 and the back side of the mold plate 940(shown in FIG. 18B) is positioned to be in contact with the mold chuckof the mold heater stack 310. A temporary deposition chamber 350 isformed by bringing together the mold heater stack 310, the transportfixture 900 and the wafer heater stack 330, as shown in FIG. 32A. Thebottom of the temporary deposition chamber 350 is formed by the mold hotplate 316, the mold chuck 317 and mold 82. Mold 82 is positioned so thatits back surface 940 is in contact with the mold chuck 317 and the frontsurface with the filed cavities faces up. The top of the temporarydeposition chamber 350 is formed by the wafer hot plate, wafer chuck 920and wafer 74. Wafer 74 is positioned so that the patterned surface facesdown directly opposite to the solder filled mold cavities. The top andbottom of the temporary chamber 350 are sealed together with the moldheater stack seal frame 319 and seal ring 320 and with the graphite seal922 between the front raised edge of the wafer chuck 920 and the backside of the transport fixture frame 910. As shown in FIG. 32A, FIG. 32Band FIG. 32C, seal ring 320 is mounted on the seal frame 319 and isbrought into contact with the front surface of the transport fixtureframe 910 to seal the sides of the temporary chamber 350. During thesolder transfer process the wafer 74 and mold 82 are unclamped from thefixture 900 and the wafer 74 is held in contact with the wafer chuck920, which in turn is held by the wafer hot plate 335 and the mold 82 isheld by the mold chuck 317 which in turn is held by the mold hot plate.An adjustable gap 352 is formed between the wafer 74 and the mold 82.Gap 352 is adjustable in the range between 0 and 3000 micrometers. Gap352 is sealed on the sides with the seal ring 320 and graphite seal 922and a process gas 354 is injected through the openings of the seal frameinto the gap area 352. In one example, the process gas is formic acid.The process steps of FIG. 8 take place in this temporary depositionchamber 350.

Referring to FIG. 26 seal frame 319 includes gas feed-through connectors323 a, 323 b and vacuum connectors 324 a, 324 b connecting to formic gaslines 321 and vacuum lines 322. Gas flow is controlled with Reed valves325. Seal frame 319 includes a grove 326 where the bellows gas seal(seal ring) 320 is placed. Gas seal 320 is designed to withstand theharsh chemical and thermal environment of the deposition chamber 350. Inone example gas seal 320 is made of Perlast® manufactured by PerlastLtd, San Jose, Calif.

The mold 82 is transferred to the mold chuck 317 by handing off positivecontrol of the mold 82 from the transport fixture 900. The hand-off isperformed by pinning the mold against the spacers 932 c with the moldtransfer pins 982 a, 982 b, 982 c and then actuating the fixtureunclamping action with the fixture indexer assemblies 980 a (shown inFIG. 31). The mold stack 310 is then driven to contact the mold, and themold chuck 317 vacuum is actuated to mount the mold 82 to the mold chuck317.

Referring to FIG. 13 and FIG. 14, the aligner module 800 includes analignment support frame 801, alignment stage 802 for supporting themold/wafer transport fixture 900, two microscope XYZ stages 804, twomicroscopes 806, a wedge compensation system 808 and alignment stage XYTdrives 809. The mold/wafer alignment process includes a mechanicalpre-alignment and a pattern based image alignment. The final alignmentis locked in the transport fixture 900 and is retained throughout thesolder transfer process in the STT unit 301. For the alignment process,first the transport fixture 900 is loaded in the alignment stage 802 andthen the mold 82 and the wafer 74 are mechanically pre-aligned in thetransport fixture 900 using fiduciary markers. The wafer 74 includes anotch in its radial periphery and three marking points on its surfacethat are aligned with three motorized alignment pins. The mold includesthree marking points that are also aligned with the three motorizedalignment pins. After the mechanical pre-alignment, the wafer patternedsurface and the mold surface with the solder filled cavities are imagedand the images of the wafer and mold surfaces are aligned using apattern recognition methodology.

Prior art pattern recognition methodologies utilize unique features onobject surfaces. One example of such a prior art pattern recognitionmethodology is the Patmax® program available from Cognex Co, NatickMass. However, in the present case, the wafer 74 and mold 82 havehomogeneous distributions of uniform (circular-shaped) and homogeneousUBM structures (pads) 73 and solder bumps 85 b, respectively, and theprior art pattern recognition methodologies cannot be applied. A newprocess is used to define a unique wafer target area on a patternedwafer and a unique mold target area on a mold and the aligner system istrained to identify these unique wafer and mold target areas with thePatmax® program. These trained unique wafer and mold target areas areused to align the wafer/mold pairs.

Referring to FIG. 46 and FIG. 33 to FIG. 40, a microscope trainingprocess 600 for identifying a unique wafer target includes the followingsteps. First a prealigned wafer is loaded in the aligner module 800(601). Next the microscope 806 is positioned and focused onto an area813 of the wafer with a possible unique target in the field of view(FOV) (602), as shown in FIG. 33. The wafer search area 813 in the FOVis defined relative to the position of the microscope (603). Within thewafer search area 813, a wafer target area 813 a (training target) isdefined around a unique pattern of pads, as shown in FIG. 34, and thesystem is trained with this unique wafer target (604). Within thistraining wafer target 813 a, a wafer pad area 812 a around a single pad812 is defined, as shown in FIG. 35, and the system is trained with thispad area (605). Next, a search is performed to locate the wafer targetposition within the wafer search area (606) and then all pad positionsare searched and located relative to the wafer target area (607), asshown in FIG. 36. The relative wafer pad positions and number are savedto the corresponding wafer target area (608). The microscope is thenmoved in the X and Y directions to center the identified unique wafertarget area 813 a in the FOV and the position is saved relative to thewafer (609). The microscope position is locked in the X-Y plane (610).Next, the training process 600 continues with the definition of a uniquemold target area on the mold and the system is trained with this moldtarget. Referring to FIG. 47, the microscope is lowered in theZ-direction and the mold stage is centered below the wafer (611). Next,a mold is loaded and prealigned on the mold stage between the wafer andthe microscope (612) and the microscope is raised in the Z-direction andfocused on the mold with a possible unique mold target in the FOV (613).The mold stage is moved in the X, Y directions and rotated around anaxis perpendicular to its surface by an angle Theta (T) to center theunique mold target in the FOV (614). The mold search area in the FOV isdefined relative to the microscope and stage positions (615) and a moldtarget area around a unique pattern of solder bumps is defined withinthe search area and the system is trained with this mold target (616).Within the mold target area, a mold solder bump area around a singlesolder bump is defined and the system is trained with this mold bump(617). Next, a search is performed to locate the mold target positionwithin the mold search area (618) and then all mold bump positions aresearched and located relative to the mold target area (619). Therelative mold bump positions and number are saved to the correspondingmold target area (620). The mold stage is then moved in the X and Ydirections to center the unique mold target area in the FOV and the moldstage offset position relative to zero is saved (621).

After the training process the system is ready to use the stored uniquewafer target and unique mold target for the alignment of the wafer/moldpairs. Referring to FIG. 48 and FIG. 49, the alignment process 810includes the following steps. First, a prealigned wafer is loaded in thealigner (809), and the microscope is positioned and focused in thetrained position (811). The wafer viewing area is searched for allpossible patterns 813 b, 813 c, 813 d matching the unique wafer targetpattern (816), as shown in FIG. 37. Next, the pads in all pattern matchareas are searched and counted (817), as shown in FIG. 38. If the numberof pads in the selected pattern does not equal the number of pads in thetraining target area 813 a, the pattern is eliminated from consideration(818) and the next possible pattern is searched. If the number of padsin the selected pattern equals the number of pads in the training targetarea, the pad locations within the pattern are searched (819). For eachtarget area whose pattern and number of pads matches the pattern andnumber of pads of the training target 813 a, the X-Y locationcoordinates of the centers of all pads are identified and compared tothe X-Y location coordinates of the centers of the pads of the trainingtarget 813 a, as shown in FIG. 39. If the X-Y location coordinates ofthe pad centers do not match the X-Y location coordinates of the padcenters of the training target area, the searched patterned target areais eliminated and the next patterned target area is searched (820). Ifthe X-Y location coordinates of the pad centers match the X-Y locationcoordinates of the pad centers of the training target area, the numberof pattern matches found is increased by one (821). If the patternmatches found equals one, then a unique wafer target pattern is in view(822) and the microscope position is locked in the X-Y directions (823),as shown in FIG. 40. Next, the microscope is lowered in the Z-directionand the mold stage is centered directly below the wafer (824). The moldis loaded and prealigned onto the mold stage between the wafer and themicroscope (825) and the microscope is raised in the Z-direction andfocused on the mold view (826). Next, the mold stage is moved to thetrained X-Y and T positions (827) and the mold viewing area is searchedfor all possible mold pattern matches (828) and each mold pattern matcharea is searched first for the correct number of solder bumps (829) andthen for the correct solder bump center locations (831). If the numberof solder bumps does not equal the number of solder bumps in thetraining target the pattern is eliminated and the next possible patternmatch is searched (830). If the number of solder bumps equals the numberof solder bumps in the training target the pattern is searched for thecorrect solder bump center locations (831). For each solder bump patternif the center of each solder bump does not match the center of thetrained solder bump, the pattern is eliminated and the next pattern issearched (832). For each solder bump pattern if the solder bumplocations match the trained solder bump locations, the number of patternmatches found is increased by one (833). If the pattern matches foundequals one, then a unique mold pattern is in view (834). Finally themold stage is moved in the X-Y directions and rotated by an angle Thetain order to bring the center of the unique mold target area in line withthe center of the unique wafer target area (835).

In another embodiment, an improved wafer/mold pattern recognitionutilizes an automated mask generation for identifying ambiguouscircular-shaped pads or solder bumps. Referring to FIG. 51-52, theprocess of training the system with a patterned mask 840 includes thefollowing steps. First the microscope is positioned onto a wafer (ormold) area to define a search location containing the desired pattern(841), as was shown in FIG. 33. Within this pattern area, the pad targetarea 813 a is defined (842), and the pad search area is set to match thepad training area (843), as shown in FIG. 41. Next the pads positionedwithin the pad training area 813 a are identified (844) and the edges ofeach pad are located (845), as shown in FIG. 42. Next, the pad diametersin the X and Y directions are measured (846), and the pad dimensions areused to design a mask image based on the pad's center position andradius (847). Next, the pad target is retrained with the new mask 855eliminating 90% of the pads center area (848), as shown in FIG. 43.Next, the search area is set to match the target pattern training area(849), the pads within the pattern target are located and counted (850)and an array of pad positions is obtained (851), as shown in FIG. 44.Next, a pattern mask image is built based upon the training area, thepad positions and the pad radii (852) and then the pattern target isretrained using the pattern mask (853), as shown in FIG. 45. The patternmask image 813u is used for the image alignment process, as wasdescribed above.

Among the advantages of this invention may be one or more of thefollowing. The mold chuck and wafer chuck provide uniform heat transferto the mold and wafer respectively. Mold heater plate and wafer heaterplate are made of ceramics that have a CTE matching the CTE of the moldand the wafer, respectively. A thermal expansion barrier materialprevents warping of the mold stack and heater stack materials andultimately of the molds and wafer. The cooling flanges prevent heat fromescaping to the frame. The mold/wafer alignment is set at the alignerand then retained throughout the entire solder transfer process.

Several embodiments of the present invention have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the invention.Accordingly, other embodiments are within the scope of the followingclaims.

1. An apparatus for forming solder bumps onto semiconductor structurescomprising: equipment for filling patterned mold cavities formed on afirst surface of a mold structure with solder; equipment for positioningand aligning a patterned first surface of a semiconductor structuredirectly opposite to said solder filled patterned mold cavities of themold structure; a fixture tool for holding and transferring said alignedmold and semiconductor structures together comprising a frame having acentral aperture dimensioned to support a substrate and wherein a secondsurface opposite to said patterned first surface of said semiconductorstructure is brought in contact with a first surface of said substrate;solder transfer equipment for receiving said fixture tool with thealigned mold and semiconductor structures and transferring the solderfrom said aligned patterned mold cavities to said aligned patternedsemiconductor first surface, wherein said solder transfer equipmentcomprises: a wafer heater stack configured to heat said semiconductorstructure; a mold heater stack configured to heat said mold structure toa process temperature slightly above said solder's melting point;wherein said fixture tool with said aligned mold and semiconductorstructures is inserted between said wafer heater stack and said moldheater stack so that a second surface opposite to said first surface ofsaid substrate is in contact with said wafer heater stack and a secondsurface opposite to said first surface of said mold structure is incontact with said mold heater stack; and wherein a deposition chamber isformed between said wafer heater stack and said mold heater stack bysealing said wafer heater stack and said mold heater stack against saidframe.
 2. The apparatus of claim 1 wherein said wafer heater stack issealed against said frame via a graphite seal ring positioned between anedge of a second surface opposite to said first surface of saidsubstrate and an edge of said central aperture.
 3. The apparatus ofclaim 2 wherein said mold heater stack is sealed against said frame viaa gas bellow seal ring.
 4. The apparatus of claim 3 further comprisingequipment for injecting a process gas into said deposition chamber. 5.The apparatus of claim 4 wherein said process gas comprises formic acid.6. The apparatus of claim 4 wherein said process gas comprises one ofhydrogen or nitrogen.
 7. The apparatus of claim 4 wherein said gasbellow seal ring comprises a seal frame and a gas bellow placed within aseal frame groove and wherein said seal frame comprises gas feed-throughlines for injecting said process gas into the deposition chamber.
 8. Theapparatus of claim 7 wherein said seal frame further comprises vacuumlines for evacuating said deposition chamber.
 9. The apparatus of claim8 wherein said gas bellow comprises a material configured to withstandsaid process gas and said process temperature.
 10. The apparatus ofclaim 9 wherein said gas bellow material comprises Perlast.
 11. Theapparatus of claim 1 wherein said fixture tool further comprises: one ormore clamp/spacer assemblies arranged symmetrically around said frame,each clamp/spacer assembly comprising a clamp configured to clamp saidmold and semiconductor structures together and a spacer configured to beinserted between said first surface of said semiconductor structure andsaid first surface of said mold structure and thereby to separate saidmold and semiconductor structures by a distance equal to said spacer'sheight.
 12. The apparatus of claim 11 wherein said spacer and said clampwithin each clamp/spacer assembly are configured to move independentfrom each other.
 13. The apparatus of claim 12 wherein said clamp/spacerassemblies are configured to move independent from each other.
 14. Theapparatus of claim 11 wherein said spacer is configured to be rotatedremotely with high precision and repeatability at said processtemperature.
 15. The apparatus of claim 14 further comprising highprecision rotary stroke bearings providing said high precision andrepeatability of said spacer rotation.
 16. The apparatus of claim 1wherein said substrate comprises a coefficient of thermal expansion(CTE) matching said semiconductor structure's CTE.
 17. The apparatus ofclaim 16 wherein said substrate comprises silicon.
 18. The apparatus ofclaim 1 wherein said substrate comprises vacuum grooves arrangedradially and at the perimeter of concentric circles formed on saidsubstrate and wherein vacuum is drawn through said vacuum grooves forholding said semiconductor structure onto said substrate.
 19. Theapparatus of claim 1 wherein said mold heater stack comprises a moldchuck, a mold hot plate being in contact with a first surface of saidmold chuck, a mold hot plate cooling flange being in contact with saidmold hot plate, a mold ceramic expansion barrier being in contact withsaid mold hot plate cooling flange and a mold water cooled heatexchanger being in contact with said mold ceramic expansion barrier andwherein a second surface of said mold chuck opposite to said firstsurface is brought in contact with said second surface of said moldstructure.
 20. The apparatus of claim 19 further comprising mold coolingflange air bellows passing through through-bores formed in said moldwater cooled heat exchanger and said mold ceramic expansion barrier andreaching said mold hot plate cooling flange.
 21. The apparatus of claim19 wherein said mold chuck comprises silicon carbide.
 22. The apparatusof claim 19 wherein said wafer heater stack comprises a wafer hot platebeing in contact with a second surface opposite to said first surface ofsaid substrate, a wafer hot plate cooling flange being in contact withsaid wafer hot plate, a wafer ceramic expansion barrier being in contactwith said wafer hot plate cooling flange and a wafer water cooled heatexchanger being in contact with said wafer ceramic expansion barrier.23. The apparatus of claim 22 further comprising wafer cooling flangeair bellows passing through through-bores formed in said wafer watercooled heat exchanger and said wafer ceramic expansion barrier andreaching said wafer hot plate cooling flange.
 24. The apparatus of claim22 wherein said ceramic expansion barriers comprise a low CTE material.25. The apparatus of claim 24 wherein said ceramic expansion barrierscomprise Zerodur.
 26. The apparatus of claim 1 wherein an adjustable gapis formed within said deposition chamber between said first surface ofsaid mold structure and said patterned first surface of saidsemiconductor structure.
 27. The apparatus of claim 26 wherein said gapis adjustable in the range between 0 and 3000 micrometers.
 28. Theapparatus of claim 27 further comprising a drive element configured tomove said mold heater stack and said mold plate toward saidsemiconductor structure and thereby adjusting said gap.
 29. Theapparatus of claim 28 wherein said mold chuck comprises vacuum groovesarranged radially and at the perimeter of concentric circles formed onsaid mold chuck and wherein vacuum is drawn through said vacuum groovesfor holding said mold structure onto said mold chuck.
 30. A method forforming solder bumps onto semiconductor structures comprising: fillingpatterned mold cavities formed on a first surface of a mold structurewith solder; positioning and aligning a patterned first surface of asemiconductor structure directly opposite to said solder filledpatterned mold cavities of the mold structure; providing a fixture toolfor holding and transferring said aligned mold and semiconductorstructures together wherein said fixture tool comprises a frame having acentral aperture dimensioned to support a substrate and wherein a secondsurface opposite to said patterned first surface of said semiconductorstructure is brought in contact with a first surface of said substrate;inserting said fixture tool with the aligned mold and semiconductorstructures into solder transfer equipment and transferring the solderfrom said aligned patterned mold cavities to said aligned patternedsemiconductor first surface, wherein said solder transfer equipmentcomprises: a wafer heater stack configured to heat said semiconductorstructure; a mold heater stack configured to heat said mold structure toa process temperature slightly above said solder's melting point;wherein said fixture tool with said aligned mold and semiconductorstructures is inserted between said wafer heater stack and said moldheater stack so that a second surface opposite to said first surface ofsaid substrate is in contact with said wafer heater stack and a secondsurface opposite to said first surface of said mold structure is incontact with said mold heater stack; and wherein a deposition chamber isformed between said wafer heater stack and said mold heater stack bysealing said wafer heater stack and said mold heater stack against saidframe.
 31. The method of claim 30 wherein an adjustable gap is formedwithin said deposition chamber between said first surface of said moldstructure and said patterned first surface of said semiconductorstructure.
 32. The method of claim 31 wherein said gap is adjustable inthe range between 0 and 3000 micrometers.
 33. The method of claim 32wherein said solder transferring comprises: preheating said mold andsemiconductor structures to a first temperature below said processtemperature while maintaining said aligned mold and semiconductorstructures within said frame, clamped to each other and to said framevia clamps and separated from each other by spacers; injecting a processgas into said deposition chamber; holding said semiconductor structureonto a substrate and said mold structure onto a mold chuck by drawingvacuum through vacuum grooves formed on said substrate and said moldchuck, respectively, and unclamping said clamps; heating said mold andsemiconductor structures to said process temperature via a mold hotplate and a wafer hot plate, respectively, thereby melting said solderin said mold cavities; removing said spacers and bringing said moldstructure in contact with said semiconductor structure whereby saidmolten solder transfers from said mold cavities onto said patternedfirst surface of said semiconductor structure; moving said moldstructure away from said semiconductor structure, thereby separatingsaid mold and semiconductor structures; inserting said spacers betweensaid separated mold and semiconductor structures and maintaining saidseparated mold and semiconductor structures at the process temperaturefor a period of time; clamping said mold and semiconductor structurestogether and onto said frame with said clamps and turning off saidvacuum; and cooling down said mold and semiconductor structures to roomtemperature.